Flicker Noise of Scaled NMOS Devices with High-K Dielectrics and Metal Gate Electrodes

Flicker Noise of Scaled NMOS Devices with High-K Dielectrics and Metal Gate Electrodes

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Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices has been scaled to the extent where significant tunneling currents flow in the gate terminal. In order to prevent this current flow, high-K materials have been introduced into the gate dielectric stack to increase the physical thickness of the gate insulator, while reducing the equivalent electrical oxide thickness (EOT). The effect is to decrease the tunneling currents by several orders of magnitude and thereby decrease power dissipation while increasing gate density and increasing clock speed. However, several challenges arise in the process of scaling the gate insulator, such as increased trap densities at the silicon interface and in the high-K films, which enhances electron-hole recombination processes and increases the low-frequency noise in these device. This thesis describes the existing theories of 1/f noise and presents the noise characterization of scaled NMOS devices with high-K dielectrics (EOTMetal Oxide Semiconductor Field Effect Transistor (MOSFET) devices has been scaled to the extent where significant tunneling currents flow in the gate terminal.


Title:Flicker Noise of Scaled NMOS Devices with High-K Dielectrics and Metal Gate Electrodes
Author:
Publisher:ProQuest - 2009
ISBN-13:

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